Nitrogen-rich indium nitride

Nitrogen-rich indium nitride

Red shift in the photoluminescence of indium gallium arsenide nitride induced by annealing in nitrogen trifluoride

The effect of annealing a 75nm-thick layer of indium gallium arsenide nitride (InGaAsN) in 1.0 10 6 Torr of nitrogen trifluoride (NF3) has been studied by photoluminescence spectrometry, X-ray diffraction, X-ray photoelectron spectroscopy, and hydrogen adsorption infrared spectroscopy. A red shift of 25 nm in the peak was observed following heating in NF3 at 530 1C. The compressive strain of th...

Defect studies in n-type indium nitride

Aalto University, P.O. Box 11000, FI-00076 Aalto www.aalto.fi Author Christian Rauch Name of the doctoral dissertation Defect studies in n-type indium nitride Publisher School of Science Unit Department of Applied Physics Series Aalto University publication series DOCTORAL DISSERTATIONS 52/2012 Field of research Engineering Physics, Physics Manuscript submitted 28 February 2012 Manuscript revis...

Critical point transitions of wurtzite indium nitride

The optical transmission, photoluminescence, and reflection spectra have been measured on a high-quality wurtzite indium nitride (InN) single crystal in the range of 0.5–20.0 eV. The fundamental bandgap of intrinsic InN has been extracted by taking into account the Burstein–Moss shift, bandgap renormalization and Urbach band tail effects, and found to be very close to the recent strongly re-est...

Characterization of Nitrogen-rich Silicon Nitride Films Grown by the Electron Cyclotron Resonance Plasma Technique

Amorphous hydrogenated silicon nitride films have been deposited by the electron cyclotron resonance plasma technique, using N2 and SiH4 as precursor gases. The gas flow ratio, deposition temperature and microwave power have been varied in order to study their effect on the properties of the films, which were characterized by Rutherford back-scattering spectrometry, elastic recoil detection ana...